Фотодиоды - подбор поставщиков
Всего результатов: 354
Если применить фильтр: 354
Изобр. | Партномер | Производитель | Описание | Data-sheet | Продукт | Упаковка / блок | Вид монтажа | Пиковая длина волны | Темновой ток | Vr - обратное напряжение | Время нарастания | Время спада | Угол половинной интенсивности | Максимальная рабочая температура | Минимальная рабочая температура | Серия |
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First Sensor | Фотодиоды avalanche photodiodes | |||||||||||||||
First Sensor | Фотодиоды 64 Element APD Array for NIR Detection | Avalanche Photodiode Arrays | BGA-68 | SMD/SMT | 905 nm | 0.3 nA | 200 V | 2 ns | + 70 C | - 20 C | APD Array | |||||
First Sensor | Фотодиоды 500um active area APD chip w/ IR | Avalanche Photodiodes | TO-5i | Through Hole | 905 nm | 1.5 nA | 220 V | 4 ns | + 70 C | - 10 C | APD Series 10 | |||||
First Sensor | Фотодиоды AD100-8-S1 120-160V | Avalanche Photodiodes | TO-52-S1 | Through Hole | 800 nm | 50 pA | 120 V | 180 ps | 116 deg | + 100 C | - 40 C | APD Series 8 | ||||
First Sensor | Фотодиоды High Speed Si APD 130um Active Area | Avalanche Photodiodes | TO-52-S1 | Through Hole | 800 nm | 4 nA | 90 V | 1 ns | 92 deg | + 100 C | - 40 C | APD Series 8 | ||||
First Sensor | Фотодиоды Si APD Enhanced for 905nm 1130um Area | Avalanche Photodiodes | TO-52 | Through Hole | 905 nm | 4 nA | 180 V | 1.3 ns | 92 deg | + 100 C | - 40 C | APD Series 9 | ||||
First Sensor | Фотодиоды 1500um active area APD chip w/ IR | Avalanche Photodiodes | TO-5i | Through Hole | 1064 nm | 7 nA | 220 V | 5 ns | + 70 C | - 15 C | APD Series 10 | |||||
First Sensor | Фотодиоды APD with 1.77mm squared active area | Avalanche Photodiodes | TO-5i | Through Hole | 905 nm | 2 nA | 160 V | 2 ns | + 100 C | - 40 C | APD Series 9 | |||||
First Sensor | Фотодиоды High Speed Si APD 1950um Active Area | Avalanche Photodiodes | TO-5 | Through Hole | 800 nm | 15 nA | 200 V | 1.4 ns | 96 deg | + 100 C | - 40 C | APD Series 8 | ||||
First Sensor | Фотодиоды APD with 0.04mm squared active area | Avalanche Photodiodes | TO-52-S1 | Through Hole | 660 nm | 0.2 nA | 60 V | 0.18 ns | + 100 C | - 40 C | APD Series 12 | |||||
First Sensor | Фотодиоды High Speed Si APD w/2.3Ghz | Avalanche Photodiodes | TO-5 | Through Hole | 800 nm | 0.3 nA | 200 V | 180 ps | 116 deg | + 60 C | 0 C | APD Series 8 | ||||
First Sensor | Фотодиоды AD230-8-S1 120-160V | Avalanche Photodiodes | TO-52-S1 | Through Hole | 800 nm | 0.3 nA | 80 V | 180 ps | 113 deg | + 100 C | - 40 C | APD Series 8 | ||||
First Sensor | Фотодиоды Si APD Enhanced for 905nm 230um Area | Avalanche Photodiodes | TO-5 | Through Hole | 905 nm | 0.5 nA | 160 V | 500 ps | 116 deg | + 60 C | 0 C | APD Series 9 | ||||
First Sensor | Фотодиоды AD230-9-TO52-S1 200-240V | Avalanche Photodiodes | TO-52-S1 | Through Hole | 905 nm | 0.5 nA | 160 V | 0.55 ns | 113 deg | + 100 C | - 40 C | APD Series 9 | ||||
First Sensor | Фотодиоды Avalanche photodiode TO5i 7.07mm | APD Series 8 | ||||||||||||||
First Sensor | Фотодиоды Si APD Enhanced for 905nm 3mm Area | Avalanche Photodiodes | TO-5i | Through Hole | 905 nm | 30 nA | 160 V | 2 ns | + 100 C | - 40 C | APD Series 9 | |||||
First Sensor | Фотодиоды High Speed Si APD w/1.3Ghz Amplifier | Avalanche Photodiodes | TO-5 | Through Hole | 800 nm | 0.5 nA | 200 V | 350 ps | 113 deg | + 60 C | 0 C | APD Series 8 | ||||
First Sensor | Фотодиоды APD with 0.2mm squared active area | Avalanche Photodiodes | TO-52-S1 | Through Hole | 660 nm | 0.3 nA | 60 V | 0.35 ns | + 100 C | - 40 C | APD Series 12 | |||||
First Sensor | Фотодиоды AD500-8-S1 120-160V | Avalanche Photodiodes | TO-52-S1 | Through Hole | 800 nm | 0.5 nA | 80 V | 350 ps | 108 deg | + 100 C | - 40 C | APD Series 8 | ||||
First Sensor | Фотодиоды Si APD Enhanced for 905nm 500um Area | Avalanche Photodiodes | TO-5 | Through Hole | 905 nm | 0.5 nA | 160 V | 550 ps | 113 deg | + 60 C | 0 C | APD Series 9 | ||||
First Sensor | Фотодиоды AD500-9-TO52-S1 200-240V | Avalanche Photodiodes | TO-52-S1 | Through Hole | 905 nm | 0.5 nA | 160 V | 550 ps | 108 deg | + 100 C | - 40 C | APD Series 9 | ||||
First Sensor | Фотодиоды 800um active area APD chip w/ IR | Avalanche Photodiodes | TO-5i | Through Hole | 1064 nm | 3 nA | 220 V | 5 ns | + 70 C | - 15 C | APD Series 10 | |||||
First Sensor | Фотодиоды High Speed Si APD 800um Active Area | Avalanche Photodiodes | TO-52-S1 | Through Hole | 410 nm | 1 nA | 100 V | 0.28 ns | 64 deg | + 85 C | - 40 C | APD Series 8 | ||||
First Sensor | Фотодиоды Si APD Enhanced for 905nm 800um Area | Avalanche Photodiodes | TO-52-S1 | Through Hole | 905 nm | 2 nA | 180 V | 0.9 ns | 101 deg | + 100 C | - 40 C | APD Series 9 | ||||
OSRAM Opto Semiconductors | Фотодиоды Si-Pin Photodiode 800-1100nm range | PIN Photodiodes | DIL-2 | Through Hole | 950 nm | 2 nA | 20 V | 20 ns | 20 ns | 60 deg | + 85 C | - 40 C | ||||
OSRAM Opto Semiconductors | Фотодиоды PHOTODIODE, SMT | PIN Photodiodes | DIL-SMT-2 | SMD/SMT | 880 nm | 2 nA | 20 V | 20 ns | 20 ns | 60 deg | + 100 C | - 40 C | ||||
OSRAM Opto Semiconductors | Фотодиоды PHOTODIODE, SMT | PIN Photodiodes | DIL-SMT-2 | SMD/SMT | 880 nm | 2 nA | 20 V | 20 ns | 20 ns | 60 deg | + 100 C | - 40 C | ||||
OSRAM Opto Semiconductors | Фотодиоды PHOTODIODE, SMT | PIN Photodiodes | DIL-SMT-2 | SMD/SMT | 950 nm | 2 nA | 20 V | 20 ns | 20 ns | 60 deg | + 85 C | - 40 C | ||||
OSRAM Opto Semiconductors | Фотодиоды PHOTODIODE, SMT | PIN Photodiodes | DIL-SMT-2 | SMD/SMT | 850 nm | 2 nA | 20 V | 20 ns | 20 ns | 60 deg | + 100 C | - 40 C | ||||
OSRAM Opto Semiconductors | Фотодиоды PHOTODIODE, SMT | PIN Photodiodes | DIL-SMT-2 | SMD/SMT | 850 nm | 2 nA | 20 V | 20 ns | 20 ns | 60 deg | + 100 C | - 40 C |